- 专利标题: Electrode structure, method of fabricating the same, and semiconductor device including the electrode structure
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申请号: US14940785申请日: 2015-11-13
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公开(公告)号: US09349821B2公开(公告)日: 2016-05-24
- 发明人: Dong-Kak Lee , Joon Kim , Bong-hyun Kim , Han-Jin Lim
- 申请人: Dong-Kak Lee , Joon Kim , Bong-hyun Kim , Han-Jin Lim
- 申请人地址: KR Suwon-si, Gyeonggi-do
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址: KR Suwon-si, Gyeonggi-do
- 代理机构: Muir Patent Law, PLLC
- 优先权: KR10-2010-0063871 20100702
- 主分类号: H01L21/311
- IPC分类号: H01L21/311 ; H01L21/28 ; H01L29/49 ; H01L27/092 ; H01L27/108 ; H01L29/423
摘要:
An electrode structure is disclosed. The electrode structure includes a first polysilicon layer doped with resistance adjustment impurities; a second polysilicon layer for adjusting grains, formed in the first polysilicon layer and doped with grain adjustment impurities; an ohmic metal layer formed on the first and second polysilicon layers; a barrier metal layer formed on the ohmic metal layer; and a metal layer formed on the barrier metal layer.