Invention Grant
US09349842B2 Methods of forming semiconductor devices comprising ferroelectric elements and fast high-K metal gate transistors
有权
形成包括铁电元件和快速高K金属栅极晶体管的半导体器件的方法
- Patent Title: Methods of forming semiconductor devices comprising ferroelectric elements and fast high-K metal gate transistors
- Patent Title (中): 形成包括铁电元件和快速高K金属栅极晶体管的半导体器件的方法
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Application No.: US13793645Application Date: 2013-03-11
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Publication No.: US09349842B2Publication Date: 2016-05-24
- Inventor: Till Schloesser , Peter Baars
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Amerson Law Firm, PLLC
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/28 ; H01L29/51 ; H01L27/115 ; H01L29/78 ; H01L21/8234
Abstract:
Ferroelectric circuit elements, such as field effect transistors or capacitors, may be formed on the basis of hafnium oxide, which may also be used during the fabrication of sophisticated high-k metal gate electrode structures of fast transistors. To this end, the hafnium-based oxide having appropriate thickness and material composition may be patterned at any appropriate manufacturing stage, without unduly affecting the overall process flow for fabricating a sophisticated high-k metal gate electrode structure.
Public/Granted literature
- US20130270619A1 SEMICONDUCTOR DEVICE COMPRISING FERROELECTRIC ELEMENTS AND FAST HIGH-K METAL GATE TRANSISTORS Public/Granted day:2013-10-17
Information query
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