Invention Grant
- Patent Title: Self-aligned bipolar junction transistors
- Patent Title (中): 自对准双极结型晶体管
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Application No.: US14495057Application Date: 2014-09-24
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Publication No.: US09349845B2Publication Date: 2016-05-24
- Inventor: David L. Harame , Qizhi Liu
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Thompson Hine LLP
- Agent Anthony J. Canale
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/735 ; H01L29/732 ; H01L29/06 ; H01L29/10 ; H01L27/082 ; H01L29/73 ; G06F17/50
Abstract:
Device structures and design structures for a bipolar junction transistor. An intrinsic base is formed on the substrate, a terminal is formed on the intrinsic base, and an extrinsic base is formed that is arranged in juxtaposition with the intrinsic base on the substrate. The intrinsic base and terminal are respectively comprised of first and second semiconductor materials.
Public/Granted literature
- US20150008558A1 SELF-ALIGNED BIPOLAR JUNCTION TRANSISTORS Public/Granted day:2015-01-08
Information query
IPC分类:
