Invention Grant
- Patent Title: Semiconductor device and semiconductor device connection structure
- Patent Title (中): 半导体器件和半导体器件的连接结构
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Application No.: US14401638Application Date: 2013-06-20
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Publication No.: US09351423B2Publication Date: 2016-05-24
- Inventor: Hiroshi Ishino , Tomokazu Watanabe
- Applicant: DENSO CORPORATION
- Applicant Address: JP Kariya
- Assignee: DENSO CORPORATION
- Current Assignee: DENSO CORPORATION
- Current Assignee Address: JP Kariya
- Agency: Posz Law Group, PLC
- Priority: JP2012-147426 20120629; JP2012-147427 20120629
- International Application: PCT/JP2013/003847 WO 20130620
- International Announcement: WO2014/002442 WO 20140103
- Main IPC: H05K7/20
- IPC: H05K7/20 ; H01L23/433 ; H01L23/492 ; H01L25/07 ; H02M7/00 ; H01L25/18 ; H02M7/48 ; H05K1/11 ; H05K1/18 ; H01L23/051 ; H01L23/00

Abstract:
In a semiconductor device, heat radiation plates are respectively disposed on a front surface side and a rear surface side of semiconductor chips in an upper arm and a lower arm. A lead-out conductor part includes a parallel conductor that includes a positive electrode terminal, a negative electrode terminal, and an insulating film disposed between the positive electrode terminal and the negative electrode terminal, and the positive electrode terminal and the negative electrode terminal are disposed oppositely while sandwiching the insulation film. The semiconductor chips are covered by a resin mold part, surfaces of the heat radiation plates opposite to the semiconductor chips, a part of the positive electrode terminal, and a part of the negative electrode terminal are exposed from the resin mold part, and at least a part of the parallel conductor in the lead-out conductor part enters the resin mold part.
Public/Granted literature
- US20150131232A1 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE CONNECTION STRUCTURE Public/Granted day:2015-05-14
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