发明授权
US09355724B2 Memory system comprising nonvolatile memory device and method of adjusting read voltage based on sub-block level program and erase status
有权
包括非易失性存储器件的存储器系统和基于子块级程序和擦除状态来调整读取电压的方法
- 专利标题： Memory system comprising nonvolatile memory device and method of adjusting read voltage based on sub-block level program and erase status
- 专利标题（中）： 包括非易失性存储器件的存储器系统和基于子块级程序和擦除状态来调整读取电压的方法
-
申请号： US14076299申请日： 2013-11-11
-
公开(公告)号： US09355724B2公开(公告)日： 2016-05-31
- 发明人: Eun Chu Oh , Junjin Kong , Hong Rak Son
- 申请人： Eun Chu Oh , Junjin Kong , Hong Rak Son
- 申请人地址： KR Suwon-si, Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si, Gyeonggi-do
- 代理机构： Volentine & Whitt, PLLC
- 优先权： KR10-2012-0127596 20121112
- 主分类号： G11C16/04
- IPC分类号： G11C16/04 ; G11C11/56 ; G11C16/26 ; G11C16/16 ; G11C16/14
摘要：
A method of operating a nonvolatile memory device configured to erase a memory block in sub-block units comprises detecting state information of unselected sub-blocks associated with a selected sub-block comprising selected memory cells, adjusting a read bias of the selected memory cells based on the state information, and reading data from the selected memory cells according to the adjusted read bias. The state information indicates a number of the unselected sub-blocks having a programmed state or an erased state.
公开/授权文献
信息查询
