Invention Grant
- Patent Title: Elongated capacitively coupled plasma source for high temperature low pressure environments
- Patent Title (中): 用于高温低压环境的细长电容耦合等离子体源
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Application No.: US14460683Application Date: 2014-08-15
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Publication No.: US09355819B2Publication Date: 2016-05-31
- Inventor: John C. Forster , Joseph Yudovsky , Garry K. Kwong , Tai T. Ngo , Kevin Griffin , Kenneth S. Collins , Ren Liu
- Applicant: John C. Forster , Joseph Yudovsky , Garry K. Kwong , Tai T. Ngo , Kevin Griffin , Kenneth S. Collins , Ren Liu
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: H01J37/32
- IPC: H01J37/32

Abstract:
A modular plasma source assembly for use with a processing chamber is described. The assembly includes an RF hot electrode with an end dielectric and a sliding ground connection positioned adjacent the sides of the electrode. A seal foil connects the sliding ground connection to the housing to provide a grounded sliding ground connection separated from the hot electrode by the end dielectric. A coaxial feed line passes through a conduit into the RF hot electrode isolated from the processing environment so that the coaxial RF feed line is at atmospheric pressure while the plasma processing region is at reduced pressure.
Public/Granted literature
- US20150048739A1 Elongated Capacitively Coupled Plasma Source For High Temperature Low Pressure Environments Public/Granted day:2015-02-19
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