Apparatus And Process Containment For Spatially Separated Atomic Layer Deposition
    3.
    发明申请
    Apparatus And Process Containment For Spatially Separated Atomic Layer Deposition 审中-公开
    用于空间分离原子层沉积的装置和过程控制

    公开(公告)号:US20150368798A1

    公开(公告)日:2015-12-24

    申请号:US14766670

    申请日:2014-02-18

    发明人: Garry K. Kwong

    IPC分类号: C23C16/455 C23C16/458

    摘要: Provided are atomic layer deposition apparatus and methods including a gas distribution plate comprising a plurality of elongate gas ports with gas curtains extending along the outer length of the gas distribution plate. Also provided are atomic layer deposition apparatuses and methods including a gas distribution plate with a plurality of elongate gas ports with gas curtains.

    摘要翻译: 提供的原子层沉积设备和方法包括:气体分配板,其包括多个细长的气体端口,其具有沿着气体分配板的外部长度延伸的气体帘幕。 还提供了原子层沉积装置和方法,其包括具有多个具有气幕的细长气体端口的气体分配板。

    Apparatus And Process For Atomic Layer Deposition
    5.
    发明申请
    Apparatus And Process For Atomic Layer Deposition 审中-公开
    用于原子层沉积的装置和工艺

    公开(公告)号:US20120225192A1

    公开(公告)日:2012-09-06

    申请号:US13189692

    申请日:2011-07-25

    IPC分类号: C23C16/458 B05D5/12

    CPC分类号: C23C16/45551 C23C16/45527

    摘要: Provided are atomic layer deposition apparatus and methods including a gas distribution plate comprising at least one gas injector unit. Each gas injector unit comprises a plurality of elongate gas injectors including at least two first reactive gas injectors and at least one second reactive gas injector, the at least two first reactive gas injectors surrounding the at least one second reactive gas injector. Also provided are atomic layer deposition apparatuses and methods including a gas distribution plate with a plurality of gas injector units.

    摘要翻译: 提供的原子层沉积装置和方法包括包括至少一个气体注入单元的气体分配板。 每个气体喷射器单元包括多个细长的气体喷射器,其包括至少两个第一反应气体喷射器和至少一个第二反应气体喷射器,所述至少两个第一反应气体喷射器围绕至少一个第二反应气体喷射器。 还提供了包括具有多个气体喷射器单元的气体分配板的原子层沉积设备和方法。

    Apparatus and Process for Atomic Layer Deposition
    6.
    发明申请
    Apparatus and Process for Atomic Layer Deposition 审中-公开
    原子层沉积的装置和工艺

    公开(公告)号:US20120225191A1

    公开(公告)日:2012-09-06

    申请号:US13037992

    申请日:2011-03-01

    IPC分类号: C23C16/455 B05D5/12

    CPC分类号: C23C16/45551 C23C16/45527

    摘要: Provided are atomic layer deposition apparatus and methods including a gas distribution plate comprising at least one gas injector unit. Each gas injector unit comprises a plurality of elongate gas injectors including at least two first reactive gas injectors and at least one second reactive gas injector, the at least two first reactive gas injectors surrounding the at least one second reactive gas injector. Also provided are atomic layer deposition apparatuses and methods including a gas distribution plate with a plurality of gas injector units.

    摘要翻译: 提供的原子层沉积装置和方法包括包括至少一个气体注入单元的气体分配板。 每个气体喷射器单元包括多个细长的气体喷射器,其包括至少两个第一反应气体喷射器和至少一个第二反应气体喷射器,所述至少两个第一反应气体喷射器围绕至少一个第二反应气体喷射器。 还提供了包括具有多个气体喷射器单元的气体分配板的原子层沉积设备和方法。

    Self-Contained Heating Element
    7.
    发明申请
    Self-Contained Heating Element 审中-公开
    自包含加热元件

    公开(公告)号:US20130164445A1

    公开(公告)日:2013-06-27

    申请号:US13720301

    申请日:2012-12-19

    IPC分类号: C23C16/448

    摘要: Provided are assemblies comprising an elongate enclosure comprising a material resistant to thermal expansion at temperatures experienced in a processing chamber. At least one heating element extends along a longitudinal axis of the elongate enclosure through an open interior region allowing a flow of gases to pass the heating element in a direction substantially perpendicular to the longitudinal axis. Methods of processing substrates using a heating element to excite gaseous precursor species are also described.

    摘要翻译: 提供了包括细长外壳的组件,其包括在处理室中经历的温度下耐受热膨胀的材料。 至少一个加热元件沿着细长外壳的纵向轴线延伸穿过开放的内部区域,允许气体流沿基本上垂直于纵向轴线的方向通过加热元件。 还描述了使用加热元件处理衬底以激发气态前体物质的方法。

    Multi-Component Film Deposition
    8.
    发明申请
    Multi-Component Film Deposition 审中-公开
    多组分膜沉积

    公开(公告)号:US20130143415A1

    公开(公告)日:2013-06-06

    申请号:US13308849

    申请日:2011-12-01

    IPC分类号: H01L21/31 B67D7/06 C23C16/455

    CPC分类号: C23C16/45551

    摘要: Provided are atomic layer deposition apparatus and methods including a gas distribution plate comprising a plurality of elongate gas ports including at least one first reactive gas port in fluid communication with a first reactive gas and at least one second reactive gas port in fluid communication with a gas manifold. The gas manifold is in fluid communication with at least a second reactive gas different from the first reactive gas and a purge gas. Also provided are atomic layer deposition apparatus and methods including linear energy sources in one or more of region before the gas distribution plate and a region after the gas distribution plate.

    摘要翻译: 提供的是原子层沉积装置和方法,其包括气体分配板,其包括多个细长气体端口,该多个细长气体端口包括与第一反应气体流体连通的至少一个第一反应气体端口和与气体流体连通的至少一个第二反应气体端口 多数。 气体歧管与不同于第一反应气体和吹扫气体的至少第二反应气体流体连通。 还提供了原子层沉积装置和方法,其包括在气体分配板之前的区域中的一个或多个区域和气体分配板之后的区域中的线性能量源。

    Modular wafer polishing apparatus and method
    9.
    发明授权
    Modular wafer polishing apparatus and method 失效
    模块化晶圆抛光装置及方法

    公开(公告)号:US5957764A

    公开(公告)日:1999-09-28

    申请号:US964930

    申请日:1997-11-05

    CPC分类号: B24B21/04 B24B37/04

    摘要: A wafer polishing apparatus includes a module frame; a continuous belt rotatable with respect to the frame, the belt having at least one vertically-oriented belt transverse portion including a polishing pad assembly; and at least one pivotable wafer-holding head drive within the frame and having a distal end portion movable to a vertical first position parallel and juxtaposed to the belt transverse portion. The head drive includes a wafer carrier for holding a wafer on the distal end portion of the head drive, while a drive moves the distal end portion and a held wafer into a vertical polishing position abutting the belt transverse portion and pressure is applied to the held-wafer against the polishing pad assembly while the wafer-holding distal end portion is rotated and swept side-by-side. After polishing the drive is reversed and the head drive is pivoted away from the belt transverse portion to a horizontal or other orientation and the then polished wafer removed. Multiple modules may be placed end-to-end or side-by-side with a robot pathway therebetween to load unpolished wafers and to unload polished wafers to a buffing station, to a cassette or other processing station.

    摘要翻译: 晶片抛光装置包括模块框架; 相对于框架可旋转的连续带,所述带具有包括抛光垫组件的至少一个垂直定向的带横向部分; 以及在所述框架内的至少一个可枢转的晶片保持头驱动器,并且具有可移动到平行并并列到所述带横向部分的垂直第一位置的远端部分。 头驱动器包括用于将晶片保持在头驱动器的远端部分的晶片载体,同时驱动器将远端部分和保持的晶片移动到邻近带横向部分的垂直抛光位置,并且压力施加到保持的 - 在晶片保持前端部分旋转并且并排扫掠的同时,抵靠抛光垫组件。 在抛光之后,驱动器被反转并且头驱动器从带横向部分转动到水平或其它方向,并且然后抛光晶片。 多个模块可以端对端或并排地放置在其间的机器人通路以加载未抛光的晶片并将抛光的晶片卸载到抛光台,到盒或其它处理站。