Invention Grant
- Patent Title: Direct and sequential formation of monolayers of boron nitride and graphene on substrates
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Application No.: US14608661Application Date: 2015-01-29
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Publication No.: US09355842B2Publication Date: 2016-05-31
- Inventor: Michael R. Seacrist , Vikas Berry , Phong Tuan Nguyen
- Applicant: SunEdison Semiconductor Limited (UEN201334164H) , Kansas State University Research Foundation
- Applicant Address: SG Singapore US KS Manhatton
- Assignee: SunEdison Semiconductor Limited (UEN201334164H),Kansas State University Research Foundation
- Current Assignee: SunEdison Semiconductor Limited (UEN201334164H),Kansas State University Research Foundation
- Current Assignee Address: SG Singapore US KS Manhatton
- Agency: Armstrong Teasdale LLP
- Main IPC: H01L21/331
- IPC: H01L21/331 ; H01L21/8222 ; H01L21/02 ; H01L29/16 ; H01L29/267 ; B82Y40/00 ; B82Y30/00 ; H01L29/20
Abstract:
The invention generally related to a method for preparing a layer of graphene directly on the surface of a substrate, such as a semiconductor substrate. The layer of graphene may be formed in direct contact with the surface of the substrate, or an intervening layer of a material may be formed between the substrate surface and the graphene layer.
Public/Granted literature
- US20150144881A1 DIRECT AND SEQUENTIAL FORMATION OF MONOLAYERS OF BORON NITRIDE AND GRAPHENE ON SUBSTRATES Public/Granted day:2015-05-28
Information query
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