Invention Grant
- Patent Title: Semiconductor device including a dielectric material
- Patent Title (中): 包括电介质材料的半导体器件
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Application No.: US14182689Application Date: 2014-02-18
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Publication No.: US09355881B2Publication Date: 2016-05-31
- Inventor: Bernhard Goller , Eva-Maria Hess , Edward Fuergut , Christian Schweiger
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: H01L21/683
- IPC: H01L21/683 ; H01L21/268 ; H01L21/304 ; H01L21/762 ; H01L21/78 ; H01L23/00 ; H01L21/56 ; H01L23/31
Abstract:
A method for manufacturing a semiconductor device includes providing a carrier and a semiconductor wafer having a first side and a second side opposite to the first side. The method includes applying a dielectric material to the carrier or the semiconductor wafer and bonding the semiconductor wafer to the carrier via the dielectric material. The method includes processing the semiconductor wafer and removing the carrier from the semiconductor wafer such that the dielectric material remains on the semiconductor wafer to provide a semiconductor device comprising the dielectric material.
Public/Granted literature
- US20150235890A1 SEMICONDUCTOR DEVICE INCLUDING A DIELECTRIC MATERIAL Public/Granted day:2015-08-20
Information query
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