发明授权
US09355907B1 Hybrid wafer dicing approach using a line shaped laser beam profile laser scribing process and plasma etch process
有权
使用线形激光束轮廓激光划线工艺和等离子体蚀刻工艺的混合晶片切割方法
- 专利标题： Hybrid wafer dicing approach using a line shaped laser beam profile laser scribing process and plasma etch process
- 专利标题（中）： 使用线形激光束轮廓激光划线工艺和等离子体蚀刻工艺的混合晶片切割方法
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申请号： US14589918申请日： 2015-01-05
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公开(公告)号： US09355907B1公开(公告)日： 2016-05-31
- 发明人: Wei-Sheng Lei , Jungrae Park , Prabhat Kumar , James S. Papanu , Brad Eaton , Ajay Kumar
- 申请人： Wei-Sheng Lei , Jungrae Park , Prabhat Kumar , James S. Papanu , Brad Eaton , Ajay Kumar
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Blakely Sokoloff Taylor Zafman LLP
- 主分类号： H01L21/78
- IPC分类号： H01L21/78 ; H01L23/28 ; H01L21/82 ; H01L21/268 ; H01L21/3065 ; H01L21/308 ; H01L21/02 ; H01L21/67 ; H01J37/32
摘要：
Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The mask is then patterned with a line shaped laser beam profile laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then plasma etched through the gaps in the patterned mask to singulate the integrated circuits.
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