Invention Grant
US09356014B2 High-voltage metal-insulator-semiconductor field effect transistor structures
有权
高压金属绝缘体 - 半导体场效应晶体管结构
- Patent Title: High-voltage metal-insulator-semiconductor field effect transistor structures
- Patent Title (中): 高压金属绝缘体 - 半导体场效应晶体管结构
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Application No.: US14522652Application Date: 2014-10-24
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Publication No.: US09356014B2Publication Date: 2016-05-31
- Inventor: William F. Clark, Jr. , Qizhi Liu , John J. Pekarik , Yun Shi , Yanli Zhang
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Roberts Mlotkowski Safran & Cole, P.C.
- Agent Michael Lestrange; Andrew M. Calderon
- Main IPC: H01L27/06
- IPC: H01L27/06 ; H01L21/8249 ; H01L21/8234 ; H01L29/04 ; H01L27/092 ; H01L29/161 ; H01L29/45 ; H01L29/735 ; H01L29/40 ; H01L27/088 ; H01L29/78 ; H01L29/66 ; H01L29/73
Abstract:
Semiconductor structures and methods of manufacture are disclosed herein. Specifically, disclosed herein are methods of manufacturing a high-voltage metal-oxide-semiconductor field-effect transistor and respective structures. A method includes forming a field-effect transistor (FET) on a substrate in a FET region, forming a high-voltage FET (HVFET) on a dielectric stack over a over lightly-doped diffusion (LDD) drain in a HVFET region, and forming an NPN on the substrate in an NPN region.
Public/Granted literature
- US20150041895A1 SEMICONDUCTOR STRUCTURES AND METHODS OF MANUFACTURE Public/Granted day:2015-02-12
Information query
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