Invention Grant
- Patent Title: Integrated circuit with on chip planar diode and CMOS devices
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Application No.: US14700147Application Date: 2015-04-30
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Publication No.: US09356019B2Publication Date: 2016-05-31
- Inventor: Kangguo Cheng , Ali Khakifirooz , Pranita Kerber , Ghavam G. Shahidi
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Heslin Rothenberg Farley & Mesiti P.C.
- Main IPC: H01L29/868
- IPC: H01L29/868 ; H01L27/06 ; H01L29/08 ; H01L29/861
Abstract:
An electrical circuit, planar diode, and method of forming a diode and one or more CMOS devices on the same chip. The method includes electrically isolating a portion of a substrate in a diode region from other substrate regions. The method also includes recessing the substrate in the diode region. The method further includes epitaxially forming in the diode region a first doped layer above the substrate and epitaxially forming in the diode region a second doped layer above the first doped layer.
Public/Granted literature
- US20150262998A1 INTEGRATED CIRCUIT WITH ON CHIP PLANAR DIODE AND CMOS DEVICES Public/Granted day:2015-09-17
Information query
IPC分类:
