Invention Grant
- Patent Title: Electronic device with asymmetric gate strain
- Patent Title (中): 具有不对称栅极应变的电子器件
-
Application No.: US14456435Application Date: 2014-08-11
-
Publication No.: US09356145B2Publication Date: 2016-05-31
- Inventor: Gurtej S. Sandhu , Kunal R. Parekh
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/78 ; H01L29/10 ; H01L21/28 ; H01L29/423 ; H01L29/49 ; H01L29/66 ; H01L21/8238
Abstract:
The use of strained gate electrodes in integrated circuits results in a transistor having improved carrier mobility, improved drive characteristics, and reduced source drain junction leakage. The gate electrode strain can be obtained through non symmetric placement of stress inducing structures as part of the gate electrode.
Public/Granted literature
- US20140346577A1 ELECTRONIC DEVICE WITH ASYMMETRIC GATE STRAIN Public/Granted day:2014-11-27
Information query
IPC分类:
