发明授权
US09356151B2 Fabrication of graphene nanoribbons and nanowires using a meniscus as an etch mask
有权
使用弯月面作为蚀刻掩模制造石墨烯纳米带和纳米线
- 专利标题: Fabrication of graphene nanoribbons and nanowires using a meniscus as an etch mask
- 专利标题(中): 使用弯月面作为蚀刻掩模制造石墨烯纳米带和纳米线
-
申请号: US14171642申请日: 2014-02-03
-
公开(公告)号: US09356151B2公开(公告)日: 2016-05-31
- 发明人: James M. Tour , Vera Abramova , Alexander Slesarev
- 申请人: James M. Tour , Vera Abramova , Alexander Slesarev
- 申请人地址: US TX Houston
- 专利权人: WILLIAM MARSH RICE UNIVERSITY
- 当前专利权人: WILLIAM MARSH RICE UNIVERSITY
- 当前专利权人地址: US TX Houston
- 代理机构: Winstead PC
- 主分类号: H01L21/44
- IPC分类号: H01L21/44 ; H01L29/786 ; C01B31/04 ; H01L21/3065 ; H01L21/311 ; H01L21/3213 ; H01L29/66 ; B82Y40/00
摘要:
In some embodiments, the present disclosure pertains to methods of preparing graphene nanoribbons from a graphene film associated with a meniscus, where the method comprises patterning the graphene film while the meniscus acts as a mask above a region of the graphene film, and where the patterning results in formation of graphene nanoribbons from the meniscus-masked region of the graphene film. Additional embodiments of the present disclosure pertain to methods of preparing wires from a film associated with a meniscus, where the method comprises patterning the film while the meniscus acts as a mask above a region of the film, and where the patterning results in formation of a wire from the meniscus-masked region of the film. Additional embodiments of the present disclosure pertain to chemical methods of preparing wires from water-reactive materials.
公开/授权文献
- US20140220773A1 FABRICATION OF GRAPHENE NANORIBBONS AND NANOWIRES 公开/授权日:2014-08-07
信息查询
IPC分类: