Invention Grant
- Patent Title: Light emitting diode and method of fabricating the same
- Patent Title (中): 发光二极管及其制造方法
-
Application No.: US14459887Application Date: 2014-08-14
-
Publication No.: US09356212B2Publication Date: 2016-05-31
- Inventor: Se Hee Oh , Mae Yi Kim , Seom Geun Lee , Myoung Hak Yang , Yeo Jin Yoon
- Applicant: SEOUL VIOSYS CO., LTD.
- Applicant Address: KR Ansan-si
- Assignee: Seoul Viosys Co., Ltd.
- Current Assignee: Seoul Viosys Co., Ltd.
- Current Assignee Address: KR Ansan-si
- Agency: H.C. Park & Associates, PLC
- Priority: KR10-2012-0150388 20121221; KR10-2013-0029136 20130319; KR10-2013-0032481 20130327; KR10-2013-0097078 20130816; KR10-2013-0097079 20130816; KR10-2014-0103815 20140811
- Main IPC: H01L33/62
- IPC: H01L33/62 ; H01L33/38 ; H01L33/14 ; H01L27/15

Abstract:
A light emitting diode includes light emitting cells disposed on a substrate and interconnections connecting the light emitting cells to each other. Each of the light emitting cells includes a first semiconductor layer, a second semiconductor layer, an active layer disposed between the first semiconductor layer and the second semiconductor layer, and a transparent electrode layer disposed on the second semiconductor layer, wherein the first and second semiconductor layers have different conductivity types. The interconnections include a common cathode commonly connecting first and second light emitting cells of the light emitting cells, the first and second light emitting cells share the first semiconductor layer, the transparent electrode layer is continuously disposed between the first and second light emitting cells, and the common cathode is electrically connected to the first and second light emitting cells through the transparent electrode layer.
Public/Granted literature
- US20140353692A1 LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME Public/Granted day:2014-12-04
Information query
IPC分类: