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    LED chip and manufacturing method of the same
    1.
    发明授权
    LED chip and manufacturing method of the same 有权

    公开(公告)号：US12288775B2

    公开(公告)日：2025-04-29

    申请号：US18111861

    申请日：2023-02-20

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Jong Min Jang ,  Chang Yeon Kim ,  Myoung Hak Yang

    IPC: H01L25/075 ,  H01L23/31 ,  H01L27/15 ,  H01L33/62

    Abstract: A light emitting device including a board, a first stacked structure configured to emit light having a first wavelength, a second stacked structure configured to emit light having a second wavelength, a third stacked structure configured to emit light having a third wavelength, a first connection electrode electrically connected to the first stacked structure, the second stacked structure, and the third stacked structure, and a protection material covering at least a portion of the first connection electrode, in which each of the first, second, and third stacked structures is configured to selectively emit light while being connected to the first connection electrode, and the protection material is configured to transmit at least 50% of light having the first wavelength, light having the second wavelength, and light having the third wavelength upon operation of each of the first, second, and third stacked structures.

    Light emitting element including ZnO transparent electrode
    3.
    发明授权
    Light emitting element including ZnO transparent electrode 有权

    公开(公告)号：US10396250B2

    公开(公告)日：2019-08-27

    申请号：US15870687

    申请日：2018-01-12

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Chan Seob Shin ,  Myoung Hak Yang ,  Yeo Jin Yoon ,  Seom Geun Lee

    IPC: H01L33/42 ,  H01L33/20 ,  H01L33/22 ,  H01L33/38

    Abstract: An exemplary light emitting diode is provided to comprise: a first semiconductor layer; a mesa disposed on the first semiconductor layer and including an active layer and a second semiconductor layer disposed on the active layer; a ZnO transparent electrode disposed on the mesa; a first electrode disposed on the first semiconductor layer; and a second electrode disposed on the ZnO transparent electrode, and including a second electrode pad and at least one second electrode extending portion extending from the second electrode pad. The second electrode extending portion contacts the ZnO transparent electrode. The ZnO transparent electrode includes a first region and a second region. The first region protrudes from the top surface of the ZnO transparent electrode, includes a plurality of projecting portions arranged in a predetermined pattern, the thickness of the first region greater than the thickness of the second region.

    LED CHIP HAVING ESD PROTECTION
    5.
    发明申请
    LED CHIP HAVING ESD PROTECTION 有权
    LED芯片具有防静电保护功能

    公开(公告)号：US20160218096A1

    公开(公告)日：2016-07-28

    申请号：US14991829

    申请日：2014-07-10

    Applicant: SEOUL VIOSYS CO., LTD

    Inventor： Seom Geun Lee ,  Yeo Jin Yoon ,  Jae Kwon Kim ,  So Ra Lee ,  Myoung Hak Yang

    IPC: H01L27/02 ,  H01L25/16 ,  H01L33/40 ,  H01L33/62 ,  H01L33/06 ,  H01L33/32

    CPC classification number: H01L27/0255 ,  H01L25/167 ,  H01L27/15 ,  H01L33/06 ,  H01L33/32 ,  H01L33/405 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Disclosed herein is a light emitting diode chip having ESD protection. An exemplary embodiment provides a flip-chip type light emitting diode chip, which includes a light emitting diode part aligned on a substrate, and a reverse-parallel diode part disposed on the substrate and connected to the light emitting diode part. Within the flip-chip type light emitting diode chip, the light emitting diode part is placed together with reverse-parallel diode part, thereby providing a light emitting diode chip exhibiting strong resistance to electrostatic discharge.

    Abstract translation: 这里公开了具有ESD保护的发光二极管芯片。 示例性实施例提供了一种倒装芯片型发光二极管芯片，其包括在基板上对准的发光二极管部件和设置在基板上并连接到发光二极管部件的反并联二极管部件。 在倒装芯片型发光二极管芯片内，发光二极管部分与反并联二极管部分一起放置，从而提供显示出对静电放电具有很强抵抗力的发光二极管芯片。

    Light emitting device package and display device having the same
    7.
    发明授权
    Light emitting device package and display device having the same 有权

    公开(公告)号：US11152553B2

    公开(公告)日：2021-10-19

    申请号：US16737984

    申请日：2020-01-09

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Myoung Hak Yang

    IPC: H01L33/62 ,  H01L33/08 ,  H01L25/075 ,  H01L33/38 ,  H01L33/44 ,  H01L27/12

    Abstract: A light emitting device package including a base substrate having a front surface and a rear surface, and including a first recess portion recessed from the front surface, a plurality of outer electrodes disposed on the front surface, a light emitting device disposed in the first recess portion and configured to emit light in a direction away from the base substrate, and including a substrate, a light emitting structure disposed on the substrate, and a plurality of bump electrodes disposed on the substrate, and a plurality of connection electrodes connecting the light emitting device to the outer electrodes, in which an upper surface of the bump electrodes and an upper surface of the outer electrodes are disposed on substantially the same plane, and each of the connection electrodes is disposed on one of the bump electrodes and one of the outer electrodes that are adjacent to each other.

    LIGHT EMITTING DEVICE
    8.
    发明申请
    LIGHT EMITTING DEVICE 审中-公开

    公开(公告)号：US20200058824A1

    公开(公告)日：2020-02-20

    申请号：US16536627

    申请日：2019-08-09

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Jong Min JANG ,  Chang Yeon Kim ,  Myoung Hak Yang

    IPC: H01L33/00 ,  H01L33/14 ,  H01L33/38 ,  H01L27/15

    Abstract: A light emitting device including a first light emitting part including a first n-type semiconductor layer, and a first mesa structure including a first active layer, a first p-type semiconductor layer, and a first transparent electrode vertically stacked one over another and exposing a portion of a first surface the first n-type semiconductor layer, a second light emitting part disposed on the exposed portion of the first n-type semiconductor layer and spaced apart from the first mesa structure, and including a second n-type semiconductor layer, a second active layer, a second p-type semiconductor layer, and a second transparent electrode, and a first bonding part bonding and electrically coupling the first n-type semiconductor layer and the second n-type semiconductor layer to each other.

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