Invention Grant
- Patent Title: Data storage device and error correction method capable of adjusting voltage distribution
- Patent Title (中): 数据存储装置和能够调整电压分布的纠错方法
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Application No.: US14271897Application Date: 2014-05-07
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Publication No.: US09361999B2Publication Date: 2016-06-07
- Inventor: Chun-Yi Chen , Chun-Hui Chen
- Applicant: Silicon Motion, Inc.
- Applicant Address: TW Jhubei, Hsinchu County
- Assignee: SILICON MOTION, INC.
- Current Assignee: SILICON MOTION, INC.
- Current Assignee Address: TW Jhubei, Hsinchu County
- Agency: McClure, Qualey & Rodack, LLP
- Priority: TW102138403A 20131024
- Main IPC: G06F11/07
- IPC: G06F11/07 ; G11C16/34 ; G06F11/14 ; G11C29/02 ; G11C29/42 ; G06F11/10 ; G11C7/14 ; G11C29/04
Abstract:
The present invention provides a data storage device including a flash memory and a controller. The controller is configured to perform a first read operation to read a first page corresponding to a first word line of the flash memory according to a read command of a host, and perform a distribution-adjustment procedure when data read by the first read operation cannot be recovered by coding, wherein the controller is further configured to perform an adjustable read operation to read a second page corresponding to a second word line of the flash memory in the distribution-adjustment procedure.
Public/Granted literature
- US20140359345A1 DATA STORAGE DEVICE AND ERROR CORRECTION METHOD THEREOF Public/Granted day:2014-12-04
Information query
