公开(公告)号：US09361999B2

公开(公告)日：2016-06-07

申请号：US14271897

申请日：2014-05-07

Applicant: Silicon Motion, Inc.

Inventor： Chun-Yi Chen ,  Chun-Hui Chen

IPC: G06F11/07 ,  G11C16/34 ,  G06F11/14 ,  G11C29/02 ,  G11C29/42 ,  G06F11/10 ,  G11C7/14 ,  G11C29/04

CPC classification number: G11C16/349 ,  G06F11/0703 ,  G06F11/0727 ,  G06F11/1068 ,  G06F11/1072 ,  G06F11/141 ,  G11C7/14 ,  G11C16/26 ,  G11C29/021 ,  G11C29/028 ,  G11C29/42 ,  G11C29/52 ,  G11C2029/0411

Abstract: The present invention provides a data storage device including a flash memory and a controller. The controller is configured to perform a first read operation to read a first page corresponding to a first word line of the flash memory according to a read command of a host, and perform a distribution-adjustment procedure when data read by the first read operation cannot be recovered by coding, wherein the controller is further configured to perform an adjustable read operation to read a second page corresponding to a second word line of the flash memory in the distribution-adjustment procedure.

Abstract translation: 本发明提供一种包括闪速存储器和控制器的数据存储装置。 控制器被配置为执行第一读取操作以根据主机的读取命令读取与闪存的第一字线对应的第一页，并且当通过第一读取操作读取的数据不能执行分配调整过程 通过编码恢复，其中控制器还被配置为执行可调读取操作以在分发调整过程中读取与闪存的第二字线相对应的第二页。

公开(公告)号：US10157682B2

公开(公告)日：2018-12-18

申请号：US14989080

申请日：2016-01-06

Applicant: Silicon Motion, Inc.

Inventor： Chun-Yi Chen ,  Chun-Hui Chen

IPC: G06F11/10 ,  G11C29/52 ,  G11C16/26 ,  G11C16/34 ,  G06F11/07 ,  G06F11/14 ,  G11C29/02 ,  G11C29/42 ,  G11C7/14 ,  G11C29/04

Abstract: The present invention provides a data storage device including a flash memory and a controller. The controller is configured to perform a first read operation to read a first page corresponding to a first word line of the flash memory according to a read command of a host, and perform a distribution-adjustment procedure when data read by the first read operation cannot be recovered by coding, wherein the controller is further configured to perform an adjustable read operation to read a second page corresponding to a second word line of the flash memory in the distribution-adjustment procedure.