Invention Grant
- Patent Title: Semiconductor process
- Patent Title (中): 半导体工艺
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Application No.: US14454332Application Date: 2014-08-07
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Publication No.: US09362125B2Publication Date: 2016-06-07
- Inventor: Yuan-Hsiang Chang , Yi-Shan Chiu , Zhen Chen , Wei Ta , Wei-Chang Liu
- Applicant: United Microelectronics Corp.
- Applicant Address: TW Hsinchu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Hsinchu
- Agency: J.C. Patents
- Main IPC: H01L21/28
- IPC: H01L21/28 ; H01L29/66 ; H01L29/792 ; H01L27/115

Abstract:
A semiconductor process is described. A semiconductor substrate having a memory area, a first device area and a second device area is provided. A patterned charge-trapping layer is formed on the substrate, covering the memory area and the second device area but exposing the first device area. A first gate oxide layer is formed in the first device area. The charge-trapping layer in the second device area is removed. A second gate oxide layer is formed in the second device area.
Public/Granted literature
- US20160042957A1 SEMICONDUCTOR PROCESS Public/Granted day:2016-02-11
Information query
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