Semiconductor process

Invention Grant

US09362125B2 Semiconductor process 有权

Title translation: 半导体工艺

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Patent Title: Semiconductor process
Patent Title (中): 半导体工艺
Application No.: US14454332

Application Date: 2014-08-07
Publication No.: US09362125B2

Publication Date: 2016-06-07
Inventor: Yuan-Hsiang Chang , Yi-Shan Chiu , Zhen Chen , Wei Ta , Wei-Chang Liu
Applicant: United Microelectronics Corp.
Applicant Address: TW Hsinchu
Assignee: United Microelectronics Corp.
Current Assignee: United Microelectronics Corp.
Current Assignee Address: TW Hsinchu
Agency: J.C. Patents
Main IPC: H01L21/28
IPC: H01L21/28 ; H01L29/66 ; H01L29/792 ; H01L27/115

Abstract:

A semiconductor process is described. A semiconductor substrate having a memory area, a first device area and a second device area is provided. A patterned charge-trapping layer is formed on the substrate, covering the memory area and the second device area but exposing the first device area. A first gate oxide layer is formed in the first device area. The charge-trapping layer in the second device area is removed. A second gate oxide layer is formed in the second device area.

Abstract(Chinese):

描述半导体工艺。提供具有存储区域，第一设备区域和第二设备区域的半导体衬底。图案化的电荷捕获层形成在衬底上，覆盖存储区域和第二器件区域，但暴露第一器件区域。第一栅极氧化物层形成在第一器件区域中。去除第二装置区域中的电荷捕获层。第二栅极氧化层形成在第二器件区域中。

Public/Granted literature

US20160042957A1 SEMICONDUCTOR PROCESS Public/Granted day:2016-02-11

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/28	....用H01L21/20至H01L21/268各组不包含的方法或设备在半导体材料上制造电极的