Invention Grant
US09362176B2 Uniform exposed raised structures for non-planar semiconductor devices
有权
用于非平面半导体器件的均匀暴露的凸起结构
- Patent Title: Uniform exposed raised structures for non-planar semiconductor devices
- Patent Title (中): 用于非平面半导体器件的均匀暴露的凸起结构
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Application No.: US14319640Application Date: 2014-06-30
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Publication No.: US09362176B2Publication Date: 2016-06-07
- Inventor: Hong Yu , HongLiang Shen , Zhao Lun , Zhenyu Hu , Richard J. Carter
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Heslin Rothenberg Farley & Mesiti P.C.
- Agent Wayne F. Reinke, Esq.
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L27/088 ; H01L29/06 ; H01L21/762 ; H01L21/306

Abstract:
The use of two different materials for shallow trench isolation and deep structural trenches with a dielectric material therein (e.g., flowable oxide and a HARP oxide, respectively) causes non-uniform heights of exposed portions of raised semiconductor structures for non-planar semiconductor devices, due to the different etch rates of the materials. Non-uniform openings adjacent the exposed portions of the raised structures from recessing the isolation and dielectric materials are filled with additional dielectric material to create a uniform top layer of one material (the dielectric material), which can then be uniformly recessed to expose uniform portions of the raised structures.
Public/Granted literature
- US20150380316A1 UNIFORM EXPOSED RAISED STRUCTURES FOR NON-PLANAR SEMICONDUCTOR DEVICES Public/Granted day:2015-12-31
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