Invention Grant
- Patent Title: Methods to form conductive thin film structures
- Patent Title (中): 形成导电薄膜结构的方法
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Application No.: US14722302Application Date: 2015-05-27
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Publication No.: US09362230B1Publication Date: 2016-06-07
- Inventor: Lawrence A. Clevenger , Vincent J. McGahay , Joyeeta Nag , Yiheng Xu
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Thompson Hine LLP
- Main IPC: H01L21/265
- IPC: H01L21/265 ; H01L23/532 ; H01L21/285 ; H01L21/3213 ; H01L21/768 ; H01L23/528

Abstract:
Electrically conductive structures and methods of making electrically conductive structures. The methods include providing a dielectric layer of a material having a top surface and a dielectric constant of less than 3; rastering a gas cluster ion beam to form a patterned modified surface region of the top surface of the dielectric layer; and selectively forming an electrically conductive thin film on the patterned modified surface region using atomic layer deposition.
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