A thin film transistor substrate is disclosed, which comprises: a substrate; and plural thin film transistor (TFT) units, an insulating layer, a pixel electrode and an alignment layer sequentially disposed thereon. The TFT units comprise a gate insulating layer, an active layer and source and drain electrodes; the insulating layer has contact vias to expose the drain electrodes of the TFT units; and the pixel electrode is disposed on the insulating layer and extents to the contact vias to electrically connect with the drain electrodes. Herein, a side wall of at least one of the contact vias has a first inclined portion at a first direction and a second inclined portion at a second direction, the first direction is different from the second direction, and an inclination of the pixel electrode on the first inclined portion is different from that on the second inclined portion.