公开(公告)号：US09716179B2

公开(公告)日：2017-07-25

申请号：US15147610

申请日：2016-05-05

Applicant: INNOLUX CORPORATION

Inventor： Hsu-Kuan Hsu ,  Kuo-Hao Chiu ,  Hsia-Ching Chu ,  Peng-Cheng Huang ,  Ming Chien Sun

IPC: H01L29/786 ,  G02F1/1368 ,  H01L27/12 ,  H01L23/522 ,  G02F1/1337 ,  G02F1/1362 ,  G02F1/1333 ,  H01L23/535

CPC classification number: H01L29/78618 ,  G02F1/133345 ,  G02F1/1337 ,  G02F1/136227 ,  G02F1/1368 ,  H01L23/5226 ,  H01L23/535 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/7869 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A thin film transistor substrate is disclosed, which comprises: a substrate; and plural thin film transistor (TFT) units, an insulating layer, a pixel electrode and an alignment layer sequentially disposed thereon. The TFT units comprise a gate insulating layer, an active layer and source and drain electrodes; the insulating layer has contact vias to expose the drain electrodes of the TFT units; and the pixel electrode is disposed on the insulating layer and extents to the contact vias to electrically connect with the drain electrodes. Herein, a side wall of at least one of the contact vias has a first inclined portion at a first direction and a second inclined portion at a second direction, the first direction is different from the second direction, and an inclination of the pixel electrode on the first inclined portion is different from that on the second inclined portion.

公开(公告)号：US09362314B2

公开(公告)日：2016-06-07

申请号：US14462232

申请日：2014-08-18

Applicant: INNOLUX CORPORATION

Inventor： Hsu-Kuan Hsu ,  Kuo-Hao Chiu ,  Hsia-Ching Chu ,  Peng-Cheng Huang ,  Ming Chien Sun

IPC: H01L27/12 ,  H01L29/786 ,  G02F1/1368 ,  H01L23/522

CPC classification number: H01L29/78618 ,  G02F1/133345 ,  G02F1/1337 ,  G02F1/136227 ,  G02F1/1368 ,  H01L23/5226 ,  H01L23/535 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/7869 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A thin film transistor substrate is disclosed, which comprises: a substrate; and plural thin film transistor (TFT) units, an insulating layer, a pixel electrode and an alignment layer sequentially disposed thereon. The TFT units comprise a gate insulating layer, an active layer and source and drain electrodes; the insulating layer has contact vias to expose the drain electrodes of the TFT units; and the pixel electrode is disposed on the insulating layer and extents to the contact vias to electrically connect with the drain electrodes. Herein, a side wall of at least one of the contact vias has a first inclined portion at a first direction and a second inclined portion at a second direction, the first direction is different from the second direction, and an inclination of the pixel electrode on the first inclined portion is different from that on the second inclined portion.

Abstract translation: 公开了一种薄膜晶体管衬底，其包括：衬底; 和多个薄膜晶体管（TFT）单元，绝缘层，像素电极和顺序地布置在其上的取向层。 TFT单元包括栅极绝缘层，有源层以及源极和漏极; 绝缘层具有接触通孔以暴露TFT单元的漏电极; 并且像素电极设置在绝缘层上并且延伸到接触通孔以与漏电极电连接。 这里，至少一个接触通孔的侧壁具有在第一方向上的第一倾斜部分和在第二方向上的第二倾斜部分，第一方向与第二方向不同，并且像素电极的倾斜度 第一倾斜部分与第二倾斜部分不同。