发明授权
US09362331B2 Method and system for image sensor and lens on a silicon back plane wafer
有权
在硅背面晶片上的图像传感器和透镜的方法和系统
- 专利标题： Method and system for image sensor and lens on a silicon back plane wafer
- 专利标题（中）： 在硅背面晶片上的图像传感器和透镜的方法和系统
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申请号： US14242841申请日： 2014-04-01
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公开(公告)号： US09362331B2公开(公告)日： 2016-06-07
- 发明人: Herb He Huang , Mieno Fumitake
- 申请人： Semiconductor Manufacturing International (Shanghai) Corporation , Semiconductor Manufacturing International (Beijing) Corporation
- 申请人地址： CN Shanghai CN Beijing
- 专利权人： Semiconductor Manufacturing International (Shanghai) Corporation,Semiconductor Manufacturing International (Beijing) Corporation
- 当前专利权人： Semiconductor Manufacturing International (Shanghai) Corporation,Semiconductor Manufacturing International (Beijing) Corporation
- 当前专利权人地址： CN Shanghai CN Beijing
- 代理机构： Kilpatrick Townsend and Stockton LLP
- 优先权： CN200610119388 20061208
- 主分类号： H01L31/18
- IPC分类号： H01L31/18 ; H01L31/0232 ; H01L27/146
摘要：
A method for forming image sensors includes providing a substrate and forming a plurality of photo diode regions, each of the photo diode regions being spatially disposed on the substrate. The method also includes forming an interlayer dielectric layer overlying the plurality of photo diode regions, forming a shielding layer formed overlying the interlayer dielectric layer, and applying a silicon dioxide bearing material overlying the shielding layer. The method further includes etching portions of the silicon dioxide bearing material to form a plurality of first lens structures, and continuing to form each of the plurality of first lens structures to provide a plurality of finished lens structures.