发明授权
- 专利标题: Double diffused metal oxide semiconductor device and manufacturing method thereof
-
申请号: US14559542申请日: 2014-12-03
-
公开(公告)号: US09362384B2公开(公告)日: 2016-06-07
- 发明人: Tzu-Cheng Kao , Jian-Hsing Lee , Jin-Lian Su , Huan-Ping Chu , Hung-Der Su
- 申请人: Tzu-Cheng Kao , Jian-Hsing Lee , Jin-Lian Su , Huan-Ping Chu , Hung-Der Su
- 申请人地址: TW Chupei, Hsin-Chu
- 专利权人: Richtek Technology Corporation
- 当前专利权人: Richtek Technology Corporation
- 当前专利权人地址: TW Chupei, Hsin-Chu
- 代理机构: Tung & Associates
- 主分类号: H01L21/336
- IPC分类号: H01L21/336 ; H01L29/66 ; H01L29/78 ; H01L29/10 ; H01L29/06
摘要:
The present invention discloses a double diffused metal oxide semiconductor (DMOS) device and a manufacturing method thereof. The DMOS device includes: a first conductive type substrate, a second conductive type high voltage well, a gate, a first conductive type body region, a second conductive type source, a second conductive type drain, a first conductive type body electrode, and a first conductive type floating region. The floating region is formed in the body region, which is electrically floating and is electrically isolated from the source and the gate, such that the electrostatic discharge (ESD) effect is mitigated.