公开(公告)号：US20150079755A1

公开(公告)日：2015-03-19

申请号：US14559542

申请日：2014-12-03

申请人： Tzu-Cheng Kao ,  Jian-Hsing Lee ,  Jin-Lian Su ,  Huan-Ping Chu ,  Hung-Der Su

发明人： Tzu-Cheng Kao ,  Jian-Hsing Lee ,  Jin-Lian Su ,  Huan-Ping Chu ,  Hung-Der Su

IPC分类号： H01L29/66

CPC分类号： H01L29/66681 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/66689 ,  H01L29/7816 ,  H01L29/7835

摘要： The present invention discloses a double diffused metal oxide semiconductor (DMOS) device and a manufacturing method thereof. The DMOS device includes: a first conductive type substrate, a second conductive type high voltage well, a gate, a first conductive type body region, a second conductive type source, a second conductive type drain, a first conductive type body electrode, and a first conductive type floating region. The floating region is formed in the body region, which is electrically floating and is electrically isolated from the source and the gate, such that the electrostatic discharge (ESD) effect is mitigated.

摘要翻译： 本发明公开了一种双扩散金属氧化物半导体（DMOS）器件及其制造方法。 DMOS器件包括：第一导电类型衬底，第二导电型高压阱，栅极，第一导电类型体区域，第二导电类型源极，第二导电类型漏极，第一导电型体电极和 第一导电型浮动区域。 浮动区域形成在电气浮动并且与源极和栅极电隔离的体区中，使得减轻静电放电（ESD）效应。

公开(公告)号：US08928078B2

公开(公告)日：2015-01-06

申请号：US13726579

申请日：2012-12-25

申请人： Tzu-Cheng Kao ,  Jian-Hsing Lee ,  Jin-Lian Su ,  Huan-Ping Chu ,  Hung-Der Su

发明人： Tzu-Cheng Kao ,  Jian-Hsing Lee ,  Jin-Lian Su ,  Huan-Ping Chu ,  Hung-Der Su

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L29/78 ,  H01L29/66

CPC分类号： H01L29/66681 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/66689 ,  H01L29/7816 ,  H01L29/7835

摘要： The present invention discloses a double diffused metal oxide semiconductor (DMOS) device and a manufacturing method thereof. The DMOS device includes: a first conductive type substrate, a second conductive type high voltage well, a gate, a first conductive type body region, a second conductive type source, a second conductive type drain, a first conductive type body electrode, and a first conductive type floating region. The floating region is formed in the body region, which is electrically floating and is electrically isolated from the source and the gate, such that the electrostatic discharge (ESD) effect is mitigated.

摘要翻译： 本发明公开了一种双扩散金属氧化物半导体（DMOS）器件及其制造方法。 DMOS器件包括：第一导电类型衬底，第二导电型高压阱，栅极，第一导电类型体区域，第二导电类型源极，第二导电类型漏极，第一导电型体电极和 第一导电型浮动区域。 浮动区域形成在电气浮动并且与源极和栅极电隔离的体区中，使得减轻静电放电（ESD）效应。

公开(公告)号：US20140175545A1

公开(公告)日：2014-06-26

申请号：US13726579

申请日：2012-12-25

申请人： Tzu-Cheng Kao ,  Jian-Hsing Lee ,  Jin-Lian Su ,  Huan-Ping Chu ,  Hung-Der Su

发明人： Tzu-Cheng Kao ,  Jian-Hsing Lee ,  Jin-Lian Su ,  Huan-Ping Chu ,  Hung-Der Su

IPC分类号： H01L29/78 ,  H01L29/66

CPC分类号： H01L29/66681 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/66689 ,  H01L29/7816 ,  H01L29/7835

摘要： The present invention discloses a double diffused metal oxide semiconductor (DMOS) device and a manufacturing method thereof. The DMOS device includes: a first conductive type substrate, a second conductive type high voltage well, a gate, a first conductive type body region, a second conductive type source, a second conductive type drain, a first conductive type body electrode, and a first conductive type floating region. The floating region is formed in the body region, which is electrically floating and is electrically isolated from the source and the gate, such that the electrostatic discharge (ESD) effect is mitigated.

摘要翻译： 本发明公开了一种双扩散金属氧化物半导体（DMOS）器件及其制造方法。 DMOS器件包括：第一导电类型衬底，第二导电型高压阱，栅极，第一导电类型体区域，第二导电类型源极，第二导电类型漏极，第一导电型体电极和 第一导电型浮动区域。 浮动区域形成在电气浮动并且与源极和栅极电隔离的体区中，使得减轻静电放电（ESD）效应。

公开(公告)号：US09362384B2

公开(公告)日：2016-06-07

申请号：US14559542

申请日：2014-12-03

申请人： Tzu-Cheng Kao ,  Jian-Hsing Lee ,  Jin-Lian Su ,  Huan-Ping Chu ,  Hung-Der Su

发明人： Tzu-Cheng Kao ,  Jian-Hsing Lee ,  Jin-Lian Su ,  Huan-Ping Chu ,  Hung-Der Su

IPC分类号： H01L21/336 ,  H01L29/66 ,  H01L29/78 ,  H01L29/10 ,  H01L29/06

CPC分类号： H01L29/66681 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/66689 ,  H01L29/7816 ,  H01L29/7835

摘要： The present invention discloses a double diffused metal oxide semiconductor (DMOS) device and a manufacturing method thereof. The DMOS device includes: a first conductive type substrate, a second conductive type high voltage well, a gate, a first conductive type body region, a second conductive type source, a second conductive type drain, a first conductive type body electrode, and a first conductive type floating region. The floating region is formed in the body region, which is electrically floating and is electrically isolated from the source and the gate, such that the electrostatic discharge (ESD) effect is mitigated.