A finFET semiconductor device includes a semiconductor-on-insulator (SOI) substrate including a buried insulator layer, a plurality of semiconductor fins on the buried insulator layer, and a gate structure covering the semiconductor fins, at least one buried stressor element embedded in the buried insulator layer, and a source/drain element on an upper surface of the at least one buried stressor element and integrally formed with at least one semiconductor fin among the plurality of semiconductor fins, the at least one buried stressor element applying a stress upon the source/drain element from therebeneath.