Invention Grant
- Patent Title: Transistor structure for electrostatic discharge protection
- Patent Title (中): 用于静电放电保护的晶体管结构
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Application No.: US13746296Application Date: 2013-01-21
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Publication No.: US09362420B2Publication Date: 2016-06-07
- Inventor: Lu-An Chen , Tien-Hao Tang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L23/62
- IPC: H01L23/62 ; H01L29/861 ; H01L27/02

Abstract:
The present invention discloses a transistor structure for electrostatic discharge protection. The structure includes a substrate, a doped well, a first doped region, a second doped region and a third doped region. The doped well is disposed in the substrate and has a first conductive type. The first doped region is disposed in the substrate, encompassed by the doped well and has the first conductive type. The second doped region is disposed in the substrate, encompassed by the doped well and has a second conductive type. The third doped region is disposed in the substrate, encompassed by the doped well and has the second conductive type. A gap is disposed between the first doped region and the second doped region.
Public/Granted literature
- US20140203367A1 Transistor Structure for Electrostatic Discharge Protection Public/Granted day:2014-07-24
Information query
IPC分类: