Invention Grant
- Patent Title: Silane-containing ethylene interpolymer formulation including films and electronic device module comprising same
- Patent Title (中): 含硅烷的乙烯互聚物配方包括膜和包含它的电子器件模块
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Application No.: US14371136Application Date: 2013-02-01
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Publication No.: US09362436B2Publication Date: 2016-06-07
- Inventor: Kumar Nanjundiah , John A. Naumovitz , Rajen M. Patel , Morgan M. Hughes , Frank J. Cerk
- Applicant: Dow Global Technologies LLC
- Applicant Address: US MI Midland
- Assignee: Dow Global Technologies LLC
- Current Assignee: Dow Global Technologies LLC
- Current Assignee Address: US MI Midland
- Agency: Whyte Hirschboeck Dudek S.C.
- International Application: PCT/US2013/024344 WO 20130201
- International Announcement: WO2013/116649 WO 20130808
- Main IPC: B32B17/10
- IPC: B32B17/10 ; C08F210/16 ; C08F230/08 ; C08F255/02 ; H01L31/048 ; C08F4/659 ; C08J5/18 ; H02S40/34

Abstract:
Disclosed in more detail in this application are ethylene interpolymer films having one or more layers, comprising surface layer comprising: (A) a silane-containing ethylene interpolymer comprising (1) an ethylene interpolymer having a density of less than 0.905 g/cm3, and (2) at least 0.1 percent by weight alkoxysilane; characterized by: (3) having a volume resistivity of greater than 5×1015 ohm-cm as measured at 60 C. In one embodiment, such ethylene interpolymer has a residual boron content of less than 10 ppm and residual aluminum content of less than 100 ppm. Also disclosed are laminated electronic device modules comprising: A. at least one electronic device, and B. one of the ethylene interpolymer films as described above in intimate contact with at least one surface of the electronic device. Such laminated electronic device modules according to the invention have been shown to suffer reduced potential induced degradation (“PID”).
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