There is provided a semiconductor light emitting device. The device includes an n-type semiconductor layer, and a p-type semiconductor layer. The p-type semiconductor layer includes a plurality of first layers and second layers, each containing a p-type impurity and are alternately stacked. The impurity concentrations of the plurality of first layers increase in a direction away from the n-type semiconductor layer. An active layer is disposed between the n-type semiconductor layer and the p-type semiconductor layer.