Invention Grant
US09362482B2 Method of producing piezoelectric device using Be, Fe and Co under excess oxygen atmosphere
有权
在过量氧气氛下使用Be，Fe和Co生产压电器件的方法
- Patent Title: Method of producing piezoelectric device using Be, Fe and Co under excess oxygen atmosphere
- Patent Title (中): 在过量氧气氛下使用Be，Fe和Co生产压电器件的方法
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Application No.: US13707897Application Date: 2012-12-07
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Publication No.: US09362482B2Publication Date: 2016-06-07
- Inventor: Makoto Kubota , Kenji Takashima , Masaki Azuma , Yoshitaka Nakamura , Yuichi Shimakawa , Takashi Iijima , Bong-Yeon Lee
- Applicant: Canon Kabushiki Kaisha , Kyoto University , National Institute of Advanced Industrial Science and Technology
- Applicant Address: JP Tokyo JP Kyoto JP Tokyo
- Assignee: CANON KABUSHIKI KAISHA,KYOTO UNIVERSITY,NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE & TECHNOLOGY
- Current Assignee: CANON KABUSHIKI KAISHA,KYOTO UNIVERSITY,NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE & TECHNOLOGY
- Current Assignee Address: JP Tokyo JP Kyoto JP Tokyo
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Priority: JP2009-060269 20090312
- Main IPC: B05D5/12
- IPC: B05D5/12 ; H01L41/22 ; C04B35/01 ; C04B35/26 ; H01L41/187 ; H01L41/047 ; H01L41/318
Abstract:
Provided are a bismuth-based piezoelectric material whose insulation property is improved while its performance as a piezoelectric body is not impaired and a piezoelectric device using the piezoelectric material. The piezoelectric material includes a perovskite-type metal oxide represented by the following general formula (1): Bix(Fe1-yCoy)O3 (1) where 0.95≦x≦1.25 and 0≦y≦0.30, and a root mean square roughness Rq (nm) of a surface of the piezoelectric material satisfies a relationship of 0
Public/Granted literature
- US20130125359A1 PIEZOELECTRIC MATERIAL, PIEZOELECTRIC DEVICE, AND METHOD OF PRODUCING THE PIEZOELECTRIC DEVICE Public/Granted day:2013-05-23
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