Invention Grant
- Patent Title: Directional pre-clean in silicide and contact formation
- Patent Title (中): 定向预清洁硅化物和接触形成
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Application No.: US14982592Application Date: 2015-12-29
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Publication No.: US09368357B2Publication Date: 2016-06-14
- Inventor: Chih-Wei Chang , Hung-Chang Hsu , Chun-Hsien Huang , Yu-Hung Lin , Li-Wei Chu , Sheng-Hsuan Lin , Wei-Jung Lin , Yu-Shiuan Wang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/44 ; H01L21/285 ; H01L21/306 ; H01L21/265 ; H01L21/324 ; H01L21/225 ; H01L29/66 ; H01L21/768
Abstract:
A method includes etching a dielectric layer to form an opening, with an underlying region underlying the dielectric layer exposed to the opening, and performing a bombardment to bombard a surface region of the underlying region through the opening. After the bombardment, the surface region is reacted with a process gas to form a reaction layer. An anneal is then performed to remove the reaction layer.
Public/Granted literature
- US20160126102A1 DIRECTIONAL PRE-CLEAN IN SILICIDE AND CONTACT FORMATION Public/Granted day:2016-05-05
Information query
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