Invention Grant
US09368410B2 Semiconductor devices having tensile and/or compressive stress and methods of manufacturing
有权
具有拉伸和/或压缩应力的半导体器件和制造方法
- Patent Title: Semiconductor devices having tensile and/or compressive stress and methods of manufacturing
- Patent Title (中): 具有拉伸和/或压缩应力的半导体器件和制造方法
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Application No.: US12033280Application Date: 2008-02-19
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Publication No.: US09368410B2Publication Date: 2016-06-14
- Inventor: Brent A. Anderson , Andres Bryant , Edward J. Nowak , Edmund J. Sprogis
- Applicant: Brent A. Anderson , Andres Bryant , Edward J. Nowak , Edmund J. Sprogis
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Roberts Mlotkowski Safran & Cole, P.C.
- Agent Michael Lestrange; Andrew M. Calderon
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/762 ; H01L21/8238
Abstract:
A semiconductor device and method of manufacturing is disclosed which has a tensile and/or compressive strain applied thereto. The method includes forming at least one trench in a material; and filling the at least one trench by an oxidation process thereby forming a strain concentration in a channel of a device. The structure includes a gate structure having a channel and a first oxidized trench on a first of the channel, respectively. The first oxidized trench creates a strain component in the channel to increase device performance.
Public/Granted literature
- US20090206407A1 SEMICONDUCTOR DEVICES HAVING TENSILE AND/OR COMPRESSIVE STRESS AND METHODS OF MANUFACTURING Public/Granted day:2009-08-20
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