Invention Grant
- Patent Title: Substrate structure and semiconductor package using the same
- Patent Title (中): 基板结构和半导体封装采用相同
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Application No.: US13654713Application Date: 2012-10-18
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Publication No.: US09368467B2Publication Date: 2016-06-14
- Inventor: Chang-Fu Lin , Ho-Yi Tsai , Chin-Tsai Yao
- Applicant: Siliconware Precision Industries Co., Ltd.
- Applicant Address: TW Taichung
- Assignee: Siliconware Precision Industries Co., Ltd.
- Current Assignee: Siliconware Precision Industries Co., Ltd.
- Current Assignee Address: TW Taichung
- Agency: Mintz Levin Cohn Ferris Glovsky and Popeo, P.C.
- Agent Peter F. Corless; Steven M. Jensen
- Priority: TW101122596A 20120625
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L23/00 ; H01L23/498 ; H05K1/11 ; H05K3/34
Abstract:
A substrate structure is provided, including a substrate body and a plurality of circuits formed on the substrate body. At least one of the circuits has an electrical contact for connecting to an external element and the electrical contact is narrower in width than the circuit, thereby meeting the requirements of fine line/fine pitch and miniaturization, improving the product yield and reducing the fabrication cost.
Public/Granted literature
- US20130341806A1 SUBSTRATE STRUCTURE AND SEMICONDUCTOR PACKAGE USING THE SAME Public/Granted day:2013-12-26
Information query
IPC分类:
