Invention Grant
- Patent Title: Complementary metal-oxide-semiconductor device
- Patent Title (中): 互补金属氧化物半导体器件
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Application No.: US14071670Application Date: 2013-11-05
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Publication No.: US09368500B2Publication Date: 2016-06-14
- Inventor: Chang-Tzu Wang , Yu-Chun Chen , Tien-Hao Tang , Kuan-Cheng Su
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L27/092
- IPC: H01L27/092 ; H01L29/78 ; H01L27/06 ; H01L27/02 ; H01L21/8238

Abstract:
A CMOS device includes a substrate, a pMOS transistor and an nMOS transistor formed on the substrate, and a gated diode. The gated diode includes a floating gate formed on the substrate in between the pMOS transistor and the nMOS transistor and a pair of a p-doped region and an n-doped region formed in the substrate and between the pMOS transistor and the nMOS transistor. The n-doped region is formed between the floating gate and the nMOS transistor, and the p-doped region is formed between the floating gate and the pMOS transistor.
Public/Granted literature
- US20150123184A1 COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR DEVICE Public/Granted day:2015-05-07
Information query
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