Invention Grant
- Patent Title: Semiconductor structure
- Patent Title (中): 半导体结构
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Application No.: US14093072Application Date: 2013-11-29
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Publication No.: US09368507B2Publication Date: 2016-06-14
- Inventor: Shih-Hung Chen
- Applicant: MACRONIX INTERNATIONAL CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: H01L27/105
- IPC: H01L27/105 ; H01L27/115 ; G11C16/04

Abstract:
A semiconductor device comprises a plurality of stacking blocks and a plurality of conductive lines. Each stacking blocks comprises two opposite finger VG structures. Each finger VG structure includes a staircase structure and a plurality of bit line stacks. The staircase structure is perpendicular to the bit line stacks, and the bit line stacks of the two opposite finger VG structures are arranged alternately. The conductive lines is disposed over the stacking blocks at interval. The direction of the conductive lines is parallel to a direction of the bit line stacks. The conductive lines include a plurality of bit lines and a plurality of ground lines, and each stacking block includes at least one ground line.
Public/Granted literature
- US20150155388A1 SEMICONDUCTOR STRUCTURE Public/Granted day:2015-06-04
Information query
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