Invention Grant
US09368563B2 Semiconductor device including integrated passive device formed over semiconductor die with conductive bridge and fan-out redistribution layer
有权
半导体器件包括在半导体管芯上形成的集成无源器件，其具有导电桥和扇出重分布层
- Patent Title: Semiconductor device including integrated passive device formed over semiconductor die with conductive bridge and fan-out redistribution layer
- Patent Title (中): 半导体器件包括在半导体管芯上形成的集成无源器件，其具有导电桥和扇出重分布层
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Application No.: US14092304Application Date: 2013-11-27
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Publication No.: US09368563B2Publication Date: 2016-06-14
- Inventor: Yaojian Lin , Kai Liu , Kang Chen
- Applicant: STATS ChipPAC, Ltd.
- Applicant Address: SG Singapore
- Assignee: STATS ChipPAC Pte. Ltd.
- Current Assignee: STATS ChipPAC Pte. Ltd.
- Current Assignee Address: SG Singapore
- Agency: Patent Law Group: Atkins and Associates, P.C.
- Agent Robert D. Atkins
- Main IPC: H01L27/00
- IPC: H01L27/00 ; H01L49/02 ; H01L21/56 ; H01L23/522 ; H01L23/538 ; H01L25/16 ; H01L23/00 ; H01L23/31 ; H03H1/00 ; H01L23/498
Abstract:
A semiconductor device has a first semiconductor die. A first inductor is formed over the first semiconductor die. A second inductor is formed over the first inductor and aligned with the first inductor. An insulating layer is formed over the first semiconductor die and the first and second inductors. A conductive bridge is formed over the insulating layer and electrically connected between the second inductor and the first semiconductor die. In one embodiment, the semiconductor device has a second semiconductor die and a conductive layer is formed between the first and second semiconductor die. In another embodiment, a capacitor is formed over the first semiconductor die. In another embodiment, the insulating layer has a first thickness over a footprint of the first semiconductor die and a second thickness less than the first thickness outside the footprint of the first semiconductor die.
Public/Granted literature
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