Invention Grant
- Patent Title: Nonvolatile logic gate circuit based on phase change memory
- Patent Title (中): 基于相变存储器的非易失逻辑门电路
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Application No.: US14706004Application Date: 2015-05-07
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Publication No.: US09369130B2Publication Date: 2016-06-14
- Inventor: Xiangshui Miao , Yi Li , Yingpeng Zhong , Lei Xu , Huajun Sun , Xiaomin Cheng
- Applicant: Huazhong University of Science and Technology
- Applicant Address: CN Wuhan
- Assignee: HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY
- Current Assignee: HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY
- Current Assignee Address: CN Wuhan
- Agency: Matthias Scholl, PC
- Agent Matthias Scholl
- Priority: CN201310727395 20131225
- Main IPC: H03K19/003
- IPC: H03K19/003 ; G11C13/00 ; H03K19/173 ; H03K19/20 ; H03K19/177
Abstract:
A nonvolatile logic gate circuit based on phase change memories, including a first phase change memory, a second phase change memory, a first controllable switch element and a first resistor, wherein a first end of the first phase change memory serves as a first input end of an AND gate circuit, a first end of the second phase change memory serves as a second input end of the AND gate circuit, a first end of the first controllable switch element is connected to a second end of the first phase change memory, a second end of the first controllable switch element is grounded; one end of the first resistor is connected to the first end of the second phase change memory, the other end of the first resistor is grounded; and the first end of the second phase change memory serves as an output end of the AND gate circuit.
Public/Granted literature
- US20150236697A1 NONVOLATILE LOGIC GATE CIRCUIT BASED ON PHASE CHANGE MEMORY Public/Granted day:2015-08-20
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