Invention Grant
US09370113B2 Power semiconductor module with current sensor 有权
带电流传感器的功率半导体模块

Power semiconductor module with current sensor
Abstract:
A power semiconductor module includes a power electronics substrate having a first surface, a second surface opposite the first surface, a first longitudinal side, a second longitudinal side opposite the first longitudinal side, a module frame, which is arranged to enclose the power electronics substrate, at least one power terminal which is arranged at the first longitudinal side and extends through the module frame, a further terminal, which is arranged at the second longitudinal side and extends through the module frame, at least one power semiconductor component which is arranged on the first surface of the power electronics substrate and is electrically connected to at least one power terminal, and at least one current sensor which is designed to measure a current in a power terminal. The at least one current sensor is arranged on the power terminal and has a signal output connected to the further terminal.
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