Invention Grant
US09372379B2 Thin film transistor substrate, method for fabricating the same, and display device including the same
有权
薄膜晶体管基板及其制造方法以及包括该薄膜晶体管基板的显示装置
- Patent Title: Thin film transistor substrate, method for fabricating the same, and display device including the same
- Patent Title (中): 薄膜晶体管基板及其制造方法以及包括该薄膜晶体管基板的显示装置
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Application No.: US14136907Application Date: 2013-12-20
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Publication No.: US09372379B2Publication Date: 2016-06-21
- Inventor: Dan Bi Choi , Jung Hun Lee
- Applicant: Samsung Display Co., Ltd.
- Applicant Address: KR Samsung-ro, Giheung-Gu, Yongin-si, Gyeonggi-Do
- Assignee: Samsung Display Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.
- Current Assignee Address: KR Samsung-ro, Giheung-Gu, Yongin-si, Gyeonggi-Do
- Agent Robert E. Bushnell, Esq.
- Priority: KR10-2013-0089559 20130729
- Main IPC: G02F1/136
- IPC: G02F1/136 ; G02F1/13 ; G02F1/1368 ; G02F1/1362 ; H01L29/417 ; H01L29/66 ; H01L27/12 ; H01L27/32 ; G02F1/1333

Abstract:
A thin film transistor substrate, a method for fabricating the same, and a display device including the same are provided. In one aspect of the present invention, there is provided a thin film transistor substrate comprising a substrate, a semiconductor layer formed on the substrate, a gate insulating film formed on the semiconductor layer, a gate electrode formed on the gate insulating film, an interlayer insulating film formed on the gate electrode and including a source contact hole and a drain contact hole for exposing portions of the semiconductor layer, and a source electrode and a drain electrode respectively inserted into the source contact hole and the drain contact hole. The interlayer insulating film includes a first convex portion formed at an inlet of the source contact hole and at an inlet of the drain contact hole.
Public/Granted literature
- US20150029429A1 THIN FILM TRANSISTOR SUBSTRATE, METHOD FOR FABRICATING THE SAME, AND DISPLAY DEVICE INCLUDING THE SAME Public/Granted day:2015-01-29
Information query
IPC分类: