公开(公告)号：US09372379B2

公开(公告)日：2016-06-21

申请号：US14136907

申请日：2013-12-20

申请人： Samsung Display Co., Ltd.

发明人： Dan Bi Choi ,  Jung Hun Lee

IPC分类号： G02F1/136 ,  G02F1/13 ,  G02F1/1368 ,  G02F1/1362 ,  H01L29/417 ,  H01L29/66 ,  H01L27/12 ,  H01L27/32 ,  G02F1/1333

CPC分类号： G02F1/1368 ,  G02F1/136227 ,  G02F2001/133357 ,  H01L27/1248 ,  H01L27/1292 ,  H01L27/3248 ,  H01L27/3262 ,  H01L29/41733 ,  H01L29/66757 ,  H01L29/66969

摘要： A thin film transistor substrate, a method for fabricating the same, and a display device including the same are provided. In one aspect of the present invention, there is provided a thin film transistor substrate comprising a substrate, a semiconductor layer formed on the substrate, a gate insulating film formed on the semiconductor layer, a gate electrode formed on the gate insulating film, an interlayer insulating film formed on the gate electrode and including a source contact hole and a drain contact hole for exposing portions of the semiconductor layer, and a source electrode and a drain electrode respectively inserted into the source contact hole and the drain contact hole. The interlayer insulating film includes a first convex portion formed at an inlet of the source contact hole and at an inlet of the drain contact hole.

摘要翻译： 提供薄膜晶体管基板，其制造方法和包括该薄膜晶体管基板的显示装置。 在本发明的一个方面，提供一种薄膜晶体管基板，其包括基板，形成在基板上的半导体层，形成在半导体层上的栅极绝缘膜，形成在栅极绝缘膜上的栅电极，中间层 绝缘膜，形成在栅电极上，并且包括用于暴露半导体层的部分的源极接触孔和漏极接触孔，以及分别插入到源极接触孔和漏极接触孔中的源极电极和漏电极。 层间绝缘膜包括在源极接触孔的入口处和漏极接触孔的入口处形成的第一凸部。

公开(公告)号：US09123777B2

公开(公告)日：2015-09-01

申请号：US14017345

申请日：2013-09-04

申请人： SAMSUNG DISPLAY CO., LTD.

发明人： Dan Bi Choi ,  Jung Hun Lee ,  Sun Ho Kim

IPC分类号： H01L21/00 ,  H01L21/768 ,  H01L21/3105 ,  H01L21/311

CPC分类号： H01L21/76805 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/31127

摘要： A method for fabricating a micro electro device includes forming a conductive pattern on a substrate, forming an organic insulating film on a whole surface of the substrate with an organic insulating material to cover the conductive pattern, preparing a printing plate coated with an insulating film removing material, and forming a contact hole by removing a first portion of the organic insulating film through making the insulating film removing material come in contact with the first portion of the organic insulating film that corresponds to the conductive pattern, and forming a contact in the contact hole.

摘要翻译： 微电子器件的制造方法包括在基板上形成导电图案，在有机绝缘材料的整个表面上形成有机绝缘膜以覆盖导电图案，制备涂有绝缘膜去除的印刷版 并且通过使绝缘膜去除材料与对应于导电图案的有机绝缘膜的第一部分接触而去除有机绝缘膜的第一部分并形成接触孔，并且在接触中形成接触 孔。

公开(公告)号：US10256430B2

公开(公告)日：2019-04-09

申请号：US15410392

申请日：2017-01-19

申请人： SAMSUNG DISPLAY CO., LTD.

发明人： Khachatryan Hayk ,  Ki Hyun Kim ,  Sun Ho Kim ,  Jeong Ho Kim ,  Tae Woong Kim ,  Dan Bi Choi

IPC分类号： H01L29/08 ,  H01L51/52 ,  H01L51/00 ,  H01L51/56 ,  H01L21/56 ,  H01L23/29

摘要： An organic light emitting device includes a substrate. An organic light emitting diode is disposed on the substrate. A thin film encapsulation layer is disposed over the organic light emitting diode. The thin film encapsulation layer includes at least one organic layer. An organic passivation layer is disposed directly on the thin film encapsulation layer. The organic passivation layer has a smaller Young's modulus than the organic layer of the thin film encapsulation layer.

公开(公告)号：US09941311B2

公开(公告)日：2018-04-10

申请号：US15271022

申请日：2016-09-20

申请人： Samsung Display Co., Ltd.

发明人： Khachatryan Hayk ,  Ki Hyun Kim ,  Sun Ho Kim ,  Jeong Ho Kim ,  Tae Woong Kim ,  Yeon Gon Mo ,  Dan Bi Choi

IPC分类号： H01L27/12 ,  H01L21/683 ,  H01L27/32 ,  H01L51/00 ,  H01L51/52

CPC分类号： H01L27/1262 ,  H01L21/6835 ,  H01L27/1225 ,  H01L27/1266 ,  H01L27/3244 ,  H01L51/0097 ,  H01L51/5253 ,  H01L2221/68318 ,  H01L2221/68345 ,  H01L2221/68377 ,  H01L2221/68381 ,  H01L2227/326 ,  H01L2251/5338 ,  Y02E10/549

摘要： Disclosed herein is a flexible display device, including: a substrate that comprises a first surface and a second surface which is an opposite surface to the first surface; a light-emitting device disposed on the first surface; a reduction layer disposed on the second surface; and a barrier layer disposed between the second surface and the reduction layer.