- 专利标题: TSV structures and methods for forming the same
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申请号: US14607865申请日: 2015-01-28
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公开(公告)号: US09373575B2公开(公告)日: 2016-06-21
- 发明人: Yung-Chi Lin , Hsin-Yu Chen , Wen-Chih Chiou , Ku-Feng Yang , Tsang-Jiuh Wu , Jing-Cheng Lin
- 申请人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Slater Matsil, LLP
- 主分类号: H01L23/48
- IPC分类号: H01L23/48 ; H01L23/498 ; H01L21/768 ; H01L23/00
摘要:
A device includes a substrate having a front side and a backside, a through-via extending from the backside to the front side of the substrate, and a conductive pad on the backside of the substrate and over the through-via. The conductive pad has a substantially planar top surface. A conductive bump has a non-planar top surface over the substantially planar top surface and aligned to the through-via. The conductive bump and the conductive pad are formed of a same material. No interface is formed between the conductive bump and the conductive pad.
公开/授权文献
- US20150137360A1 TSV Structures and Methods for Forming the Same 公开/授权日:2015-05-21
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