Invention Grant
- Patent Title: Extended-drain MOS transistor in a thin film on insulator
- Patent Title (中): 绝缘体上的薄膜中的漏极扩散漏极MOS晶体管
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Application No.: US14523996Application Date: 2014-10-27
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Publication No.: US09373714B2Publication Date: 2016-06-21
- Inventor: Antoine Litty , Sylvie Ortolland
- Applicant: STMicroelectronics SA
- Applicant Address: FR Montrouge
- Assignee: STMICROELECTRONICS SA
- Current Assignee: STMICROELECTRONICS SA
- Current Assignee Address: FR Montrouge
- Agency: Gardere Wynne Sewell LLP
- Priority: FR1360496 20131028
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/786 ; H01L27/12 ; H01L29/10 ; H03K17/687
Abstract:
An extended-drain transistor is formed in a semiconductor layer arranged on one side of an insulating layer with a semiconductor region being arranged on the other side of the insulating layer. The semiconductor region includes a first portion of a first conductivity type arranged in front of the source and at least one larger portion of the gate and a second portion of a second conductivity type arranged in front of at least the larger portion of the extended drain region, each of the first and second portions being coupled to a connection pad.
Public/Granted literature
- US20150116029A1 EXTENDED-DRAIN MOS TRANSISTOR IN A THIN FILM ON INSULATOR Public/Granted day:2015-04-30
Information query
IPC分类:
