Invention Grant
- Patent Title: Quartz glass crucible, method for producing the same, and method for producing silicon single crystal
- Patent Title (中): 石英玻璃坩埚,其制造方法以及单晶硅的制造方法
-
Application No.: US13824874Application Date: 2011-09-26
-
Publication No.: US09376336B2Publication Date: 2016-06-28
- Inventor: Akihiro Kimura , Suguru Matsumoto , Izumi Fusegawa , Katsuhiko Miki
- Applicant: Akihiro Kimura , Suguru Matsumoto , Izumi Fusegawa , Katsuhiko Miki
- Applicant Address: JP Tokyo
- Assignee: SHIN-ETSU HANDOTAI CO., LTD.
- Current Assignee: SHIN-ETSU HANDOTAI CO., LTD.
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JP2010-248818 20101105
- International Application: PCT/JP2011/005368 WO 20110926
- International Announcement: WO2012/060050 WO 20120510
- Main IPC: C30B15/02
- IPC: C30B15/02 ; C03B20/00 ; C30B15/08 ; C03B19/09 ; C03B19/14 ; C03B23/20 ; C30B15/10 ; C30B29/06

Abstract:
Described herein is a method for producing a quartz glass crucible, including the steps of: preparing a crucible base material that is made of quartz glass and has a crucible shape; producing a synthetic quartz glass material by the direct process or the soot process; processing the synthetic quartz glass material into a crucible shape without pulverizing the synthetic quartz glass material; and welding the synthetic quartz glass material processed into the crucible shape to the inner surface of the crucible base material. As a result, there are provided a quartz glass crucible that avoids generation of dislocation in a silicon single crystal, the generation of dislocation caused by the crucible itself, at the time of production of a silicon single crystal and has high heat resistance, a method for producing the quartz glass crucible, and a method for producing a silicon single crystal, the method using such a quartz glass crucible.
Public/Granted literature
- US20130174777A1 QUARTZ GLASS CRUCIBLE, METHOD FOR PRODUCING THE SAME, AND METHOD FOR PRODUCING SILICON SINGLE CRYSTAL Public/Granted day:2013-07-11
Information query
IPC分类: