发明授权
- 专利标题: Quartz glass crucible, method for producing the same, and method for producing silicon single crystal
- 专利标题(中): 石英玻璃坩埚,其制造方法以及单晶硅的制造方法
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申请号: US13824874申请日: 2011-09-26
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公开(公告)号: US09376336B2公开(公告)日: 2016-06-28
- 发明人: Akihiro Kimura , Suguru Matsumoto , Izumi Fusegawa , Katsuhiko Miki
- 申请人: Akihiro Kimura , Suguru Matsumoto , Izumi Fusegawa , Katsuhiko Miki
- 申请人地址: JP Tokyo
- 专利权人: SHIN-ETSU HANDOTAI CO., LTD.
- 当前专利权人: SHIN-ETSU HANDOTAI CO., LTD.
- 当前专利权人地址: JP Tokyo
- 代理机构: Oliff PLC
- 优先权: JP2010-248818 20101105
- 国际申请: PCT/JP2011/005368 WO 20110926
- 国际公布: WO2012/060050 WO 20120510
- 主分类号: C30B15/02
- IPC分类号: C30B15/02 ; C03B20/00 ; C30B15/08 ; C03B19/09 ; C03B19/14 ; C03B23/20 ; C30B15/10 ; C30B29/06
摘要:
Described herein is a method for producing a quartz glass crucible, including the steps of: preparing a crucible base material that is made of quartz glass and has a crucible shape; producing a synthetic quartz glass material by the direct process or the soot process; processing the synthetic quartz glass material into a crucible shape without pulverizing the synthetic quartz glass material; and welding the synthetic quartz glass material processed into the crucible shape to the inner surface of the crucible base material. As a result, there are provided a quartz glass crucible that avoids generation of dislocation in a silicon single crystal, the generation of dislocation caused by the crucible itself, at the time of production of a silicon single crystal and has high heat resistance, a method for producing the quartz glass crucible, and a method for producing a silicon single crystal, the method using such a quartz glass crucible.
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