- Patent Title: Charge sensors using inverted lateral bipolar junction transistors
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Application No.: US14687489Application Date: 2015-04-15
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Publication No.: US09377543B2Publication Date: 2016-06-28
- Inventor: Jin Cai , Tak H. Ning , Jeng-Bang Yau , Sufi Zafar
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Hoffman Warnick LLC
- Agent Anthony Canale
- Main IPC: G01T1/20
- IPC: G01T1/20 ; G01T1/24 ; H01L31/115 ; H01L27/14 ; H01L31/11 ; G01T3/08 ; G01N27/403 ; H01L31/0224 ; H01L31/0352 ; H01L31/118 ; H01L27/146

Abstract:
A sensor includes a collector, an emitter and a base-region barrier formed as an inverted bipolar junction transistor having a base substrate forming a base electrode to activate the inverted bipolar junction transistor. A level surface is formed by the collector, the emitter and the base-region barrier opposite the base substrate such that when the level surface is exposed to charge, the charge is measured during operation of the bipolar junction transistor.
Public/Granted literature
- US20150295119A1 CHARGE SENSORS USING INVERTED LATERAL BIPOLAR JUNCTION TRANSISTORS Public/Granted day:2015-10-15
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