Invention Grant
US09378823B2 Programming a memory cell to a voltage to indicate a data value and after a relaxation time programming the memory cell to a second voltage to indicate the data value
有权
将存储器单元编程为电压以指示数据值，并且在松弛时间将存储器单元编程为第二电压以指示数据值
- Patent Title: Programming a memory cell to a voltage to indicate a data value and after a relaxation time programming the memory cell to a second voltage to indicate the data value
- Patent Title (中): 将存储器单元编程为电压以指示数据值，并且在松弛时间将存储器单元编程为第二电压以指示数据值
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Application No.: US14289816Application Date: 2014-05-29
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Publication No.: US09378823B2Publication Date: 2016-06-28
- Inventor: Toru Tanzawa
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C16/10 ; G11C16/34
Abstract:
A memory cell is programmed to at least a first threshold voltage to indicate a particular data value. After waiting for a relaxation time, the memory cell is programmed to at least a second threshold voltage to indicate the particular data value. The second threshold voltage is greater than the first threshold voltage.
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