发明授权
US09378831B2 Nonvolatile memory devices, operating methods thereof and memory systems including the same
有权
非易失性存储器件，其操作方法和包括其的存储器系统
- 专利标题： Nonvolatile memory devices, operating methods thereof and memory systems including the same
- 专利标题（中）： 非易失性存储器件，其操作方法和包括其的存储器系统
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申请号： US14820895申请日： 2015-08-07
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公开(公告)号： US09378831B2公开(公告)日： 2016-06-28
- 发明人: Jinman Han , Sun-Il Shim , Donghyuk Chae , Jae-Hoon Jang , Youngho Lim , Hansoo Kim , Jaehun Jeong
- 申请人： Jinman Han , Sun-Il Shim , Donghyuk Chae , Jae-Hoon Jang , Youngho Lim , Hansoo Kim , Jaehun Jeong
- 申请人地址： KR Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： KR10-2010-0011989 20100209; KR10-2010-0014275 20100217
- 主分类号： G11C16/04
- IPC分类号： G11C16/04 ; G11C16/14 ; G11C16/16 ; G11C16/08 ; G11C16/12 ; G11C16/26 ; G11C16/34 ; H01L27/115
摘要：
Nonvolatile memory device, operating methods thereof, and memory systems including the same. In the operating method, a ground select line of a first string connected to a bit line may be floated. An erase prohibition voltage may be applied to a ground select line of a second string connected to the bit line. An erase operation voltage may be applied to the first and second strings.
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