- 专利标题: Plasma processing apparatus and plasma processing method
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申请号: US14603246申请日: 2015-01-22
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公开(公告)号: US09378929B2公开(公告)日: 2016-06-28
- 发明人: Kenji Maeda , Ken Yoshioka , Hiromichi Kawasaki , Takahiro Shimomura
- 申请人: Hitachi High-Technologies Corporation
- 申请人地址: JP Tokyo
- 专利权人: HITACHI HIGH-TECHNOLOGIES CORPORATION
- 当前专利权人: HITACHI HIGH-TECHNOLOGIES CORPORATION
- 当前专利权人地址: JP Tokyo
- 代理机构: Baker Botts L.L.P.
- 主分类号: H01L21/306
- IPC分类号: H01L21/306 ; H01J37/32 ; H01L21/67 ; H01L21/02 ; C23C16/507 ; C23C16/455 ; C23C16/505 ; C23C16/52 ; H01L21/30
摘要:
A plasma processing apparatus is offered which has evacuable vacuum vessel, processing chamber disposed inside the vacuum vessel and having inside space in which plasma for processing sample to be processed is generated and in which the sample is placed, unit for supplying gas for plasma generation into processing chamber, vacuum evacuation unit for evacuating inside of processing chamber, helical resonator configured of helical resonance coil disposed outside the vacuum vessel and electrically grounded shield disposed outside the coil, RF power supply of variable frequency for supplying RF electric power in given range to the resonance coil, and frequency matching device capable of adjusting frequency of the RF power supply so as to minimize reflected RF power. The resonance coil has electrical length that is set to integral multiple of one wavelength at given frequency. The helical resonance coil has feeding point connected to ground potential using variable capacitive device.
公开/授权文献
- US20150221477A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 公开/授权日:2015-08-06
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